CAS #:

Linear Formula:

InxGa1-xAs

MDL Number:

N/A

EC No.:

N/A

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Indium Gallium Arsenide Sputtering Target
IN-GAAS-02-ST
Pricing > SDS > Data Sheet >
(3N) 99.9% Indium Gallium Arsenide Sputtering Target
IN-GAAS-03-ST
Pricing > SDS > Data Sheet >
(4N) 99.99% Indium Gallium Arsenide Sputtering Target
IN-GAAS-04-ST
Pricing > SDS > Data Sheet >
(5N) 99.999% Indium Gallium Arsenide Sputtering Target
IN-GAAS-05-ST
Pricing > SDS > Data Sheet >

Indium Gallium Arsenide Sputtering Target Properties (Theoretical)

Compound Formula InGaAs
Molecular Weight 259.46
Appearance solid
Melting Point ~1100 °C
Boiling Point N/A
Density ~5.68 g/cm3
Solubility in H2O N/A
Exact Mass 258.751048
Monoisotopic Mass 258.751048

Indium Gallium Arsenide Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
RTECS Number N/A
Transport Information N/A
MSDS / SDS

About Indium Gallium Arsenide Sputtering Target

American Elements specializes in producing high purity Indium Gallium Arsenide Sputtering Targets with the highest possible density High Purity (99.99%) Indium Gallium Arsenide Sputtering Targetand smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard sputtering targets for thin film deposition are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Rotary (cylindrical), round, rectangular, square, ring, annular, oval, "dog-bone" and other shaped targets are available in standard, custom, and research sized dimensions. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please request a quote above for more information on lead time and pricing.

Indium Gallium Arsenide Sputtering Target Synonyms

InGaAs; Gallium Indium Arsenide; GaInAs; Indium Gallium Arsenic; InxGa1-xAs

Chemical Identifiers

Linear Formula InxGa1-xAs
MDL Number N/A
EC No. N/A
Beilstein/Reaxys No. N/A
Pubchem CID 58900850
IUPAC Name arsenic; gallium; indium
SMILES [Ga].[As].[In]
InchI Identifier InChI=1S/As.Ga.In
InchI Key KXNLCSXBJCPWGL-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

American Elements accepts checks, wire transfers, ACH, most major credit and debit cards (Visa, MasterCard, AMEX, Discover) and Paypal.

For the convenience of our international customers, American Elements offers the following additional payment methods:

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Related Elements

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. Arsenic Bohr ModelThe number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Elemental ArsenicArsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.

See more Gallium products. Gallium (atomic symbol: Ga, atomic number: 31) is a Block P, Group 13, Period 4 element with an atomic weight of 69.723.The number of electrons in each of Gallium's shells is 2, 8, 18, 3 and its electron configuration is [Ar] 3d10 4s2 4p1. The gallium atom has a radius of 122.1 pm and a Van der Waals radius of 187 pm. Gallium Bohr ModelGallium was predicted by Dmitri Mendeleev in 1871. It was first discovered and isolated by Lecoq de Boisbaudran in 1875. In its elemental form, gallium has a silvery appearance. Elemental GalliumGallium is one of three elements that occur naturally as a liquid at room temperature, the other two being mercury and cesium. Gallium does not exist as a free element in nature and is sourced commercially from bauxite and sphalerite. Currently, gallium is used in semiconductor devices for microelectronics and optics. The element name originates from the Latin word 'Gallia', the old name of France, and the word 'Gallus,' meaning rooster.

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

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July 03, 2020
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