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Indium(III) Phthalocyanine Chloride

CAS #:

Linear Formula:

C32H16ClInN8

MDL Number:

MFCD00049820

EC No.:

N/A

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Indium(III) Phthalocyanine Chloride
IN3-PCINCL-02
Pricing > SDS > Data Sheet >
(3N) 99.9% Indium(III) Phthalocyanine Chloride
IN3-PCINCL-03
Pricing > SDS > Data Sheet >
(4N) 99.99% Indium(III) Phthalocyanine Chloride
IN3-PCINCL-04
Pricing > SDS > Data Sheet >
(5N) 99.999% Indium(III) Phthalocyanine Chloride
IN3-PCINCL-05
Pricing > SDS > Data Sheet >
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Indium(III) Phthalocyanine Chloride Properties

Compound Formula

C32H16ClInN8

Molecular Weight

662.79

Appearance

Purple powder or crystals

Melting Point

>300 °C

Boiling Point

N/A

Density

N/A

Exact Mass

662.022523

Monoisotopic Mass

662.022523

Indium(III) Phthalocyanine Chloride Health & Safety Information

Signal Word Warning
Hazard Statements H315-H319-H335
Hazard Codes Xi
Precautionary Statements P261-P305 + P351 + P338
Risk Codes 36/37/38
Safety Statements 26-36
RTECS Number NONH
Transport Information NONH
WGK Germany 3
GHS Pictograms
MSDS / SDS

About Indium(III) Phthalocyanine Chloride

Indium(III) Phthalocyanine Chloride is generally immediately available in most volumes. High purity, submicron and nanopowder forms may be considered. American Elements produces to many standard grades when applicable, including Mil Spec (military grade); ACS, Reagent and Technical Grade; Food, Agricultural and Pharmaceutical Grade; Optical Grade, USP and EP/BP (European Pharmacopoeia/British Pharmacopoeia) and follows applicable ASTM testing standards. Typical and custom packaging is available. Additional technical, research and safety (MSDS) information is available as is a Reference Calculator for converting relevant units of measurement.

Indium(III) Phthalocyanine Chloride Synonyms

Chloro[29H, 31H-phthalocyaninato(2-)-κ2N29, N31]indium

Indium(III) Phthalocyanine Chloride Chemical Identifiers

Linear Formula

C32H16ClInN8

Pubchem CID

16684919

MDL Number

MFCD00049820

EC No.

N/A

IUPAC Name

N/A

SMILES

C1=CC=C2C(=C1)C3=NC4=C5C=CC=CC5=C6N4[In](N7C(=NC2=N3)C8=CC=CC=C8C7=NC9=NC(=N6)C1=CC=CC=C19)Cl

InchI Identifier

InChI=1S/C32H16N8.ClH.In/c1-2-10-18-17(9-1)25-33-26(18)38-28-21-13-5-6-14-22(21)30(35-28)40-32-24-16-8-7-15-23(24)31(36-32)39-29-20-12-4-3-11-19(20)27(34-29)37-25;;/h1-16H;1H;/q-2;;+3/p-1

InchI Key

AHXBXWOHQZBGFT-UHFFFAOYSA-M

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

Recent Research

High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition., Farrell, Alan C., Lee Wook-Jae, Senanayake Pradeep, Haddad Michael A., Prikhodko Sergey V., and Huffaker Diana L. , Nano Lett, 2015 Oct 14, Volume 15, Issue 10, p.6614-9, (2015)

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May 28, 2017
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