Low frequency pressure modulation of indium antimonide.

Title Low frequency pressure modulation of indium antimonide.
Authors G.A. Hallock; M.A. Meier
Journal Rev Sci Instrum
DOI 10.1063/1.4737142
Abstract

A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient ? of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

Citation G.A. Hallock; M.A. Meier.Low frequency pressure modulation of indium antimonide.. Rev Sci Instrum. 2012;83(7):073906. doi:10.1063/1.4737142

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