Author(s) Liu, C.; Ma, W.; Chen, M.; Ren, W.; Sun, D.
Journal Nat Commun
Date Published 2019 Oct 25
Abstract

Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction transistor has been proposed theoretically where the graphene base is sandwiched by silicon layers. Here we demonstrate a vertical silicon-graphene-germanium transistor where a Schottky emitter constructed by single-crystal silicon and single-layer graphene is achieved. Such Schottky emitter shows a current of 692 A cm and a capacitance of 41 nF cm, and thus the alpha cut-off frequency of the transistor is expected to increase from about 1 MHz by using the previous tunnel emitters to above 1 GHz by using the current Schottky emitter. With further engineering, the semiconductor-graphene-semiconductor transistor is expected to be one of the most promising devices for ultra-high frequency operation.

DOI 10.1038/s41467-019-12814-1
ISSN 2041-1723
Citation Liu C, Ma W, Chen M, Ren W, Sun D. A vertical silicon-graphene-germanium transistor. Nat Commun. 2019;10(1):4873.

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