Author(s) Kwoen, J.; Jang, B.; Lee, J.; Kageyama, T.; Watanabe, K.; Arakawa, Y.
Journal Opt Express
Date Published 2018 Apr 30
Abstract

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material.

DOI 10.1364/OE.26.011568
ISSN 1094-4087
Citation Opt Express. 2018;26(9):1156811576.

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