Analog Complementary Metal-Oxide-Semiconductor Integrate-and-Fire Neuron Circuit for Overflow Retaining in Hardware Spiking Neural Networks.

Author(s) Hwang, S.; Lee, J.J.; Kwon, M.W.; Baek, M.H.; Jang, T.; Chang, J.; Lee, J.H.; Park, B.G.
Journal J Nanosci Nanotechnol
Date Published 2020 May 01
Abstract

The spiking neural network (SNN) is regarded as the third generation of an artificial neural network (ANN). In order to realize a high-performance SNN, an integrate-and-fire (I&F) neuron, one of the key elements in an SNN, must retain the overflow in its membrane after firing. This paper presents an analog CMOS I&F neuron circuit for overflow retaining. Compared with the conventional I&F neuron circuit, the basic operation of the proposed circuit is confirmed in a circuit-level simulation. Furthermore, a single-layer SNN simulation was also performed to demonstrate the effect of the proposed circuit on neural network applications by comparing the raster plots from the circuit-level simulation with those from a high-level simulation. These results demonstrate the potential of the I&F neuron circuit with overflow retaining characteristics to be utilized in upcoming high-performance hardware SNN systems.

DOI 10.1166/jnn.2020.17390
ISSN 1533-4899
Citation Hwang S, Lee J-, Kwon M-, Baek M-, Jang T, Chang J, et al. Analog Complementary Metal-Oxide-Semiconductor Integrate-and-Fire Neuron Circuit for Overflow Retaining in Hardware Spiking Neural Networks. J Nanosci Nanotechnol. 2020;20(5):3117-3122.

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