Antimonide-based membranes synthesis integration and strain engineering.

Author(s) Zamiri, M.; Anwar, F.; Klein, B.A.; Rasoulof, A.; Dawson, N.M.; Schuler-Sandy, T.; Deneke, C.F.; Ferreira, S.O.; Cavallo, F.; Krishna, S.
Journal Proc Natl Acad Sci U S A
Date Published 2017 Jan 03
Abstract

Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 m and lateral sizes from m2 to cm2 Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to 3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.

DOI 10.1073/pnas.1615645114
ISSN 1091-6490
Citation Proc Natl Acad Sci USA. 2017;114(1):E1E8.

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