Controlled Growth of 3R phase Tantalum Diselenide and its Enhanced Superconductivity.

Author(s) Deng, Y.; Lai, Y.; Zhao, X.; Wang, X.; Zhu, C.; Huang, K.; Zhu, C.; Zhou, J.; Zeng, Q.; Duan, R.; Fu, Q.; Kang, L.; Liu, Y.; Pennycook, S.J.; Wang, X.Renshaw; Liu, Z.
Journal J Am Chem Soc
Date Published 2020 Jan 21
Abstract

Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe2 with a rare 3R phase and enhanced super-conductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Low-temperature transport data reveals an enhanced superconducting transition temper-ature (Tc) of 1.6 K in the 3R-TaSe2, which undoubtedly breaks the traditional perception of TaSe2 crystal as a material with Tc close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a deci-sive role of layer stacking order in the superconducting transition and provides fresh insights on manipulating crystal structures to gain access to enhanced Tc.

DOI 10.1021/jacs.9b11673
ISSN 1520-5126
Citation Deng Y, Lai Y, Zhao X, Wang X, Zhu C, Huang K, et al. Controlled Growth of 3R phase Tantalum Diselenide and its Enhanced Superconductivity. J Am Chem Soc. 2020.

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