Copper Phosphide-Enhanced Lower Charge Trapping Occurrence in Graphitic-CN for Efficient Noble-Metal-Free Photocatalytic H Evolution.

Author(s) Wang, W.; Zhao, X.; Cao, Y.; Yan, Z.; Zhu, R.; Tao, Y.; Chen, X.; Zhang, D.; Li, G.; Phillips, D.Lee
Journal ACS Appl Mater Interfaces
Date Published 2019 Apr 23
Abstract

Graphitic carbon nitride (g-CN) fundamental photophysical processes exhibit a high frequency of charge trapping due to physicochemical defects. In this study, a copper phosphide (CuP) and g-CN hybrid was synthesized via a facile phosphorization method. CuP, as an electron acceptor, efficiently captures the photogenerated electrons and drastically improved the charge separation rate to cause a significantly enhanced photocatalytic performance. Moreover, the robust and intimate chemical interactions between CuP and g-CN offers a rectified charge-transfer channel that can lead to a higher H evolution rate (HRE, 277.2 μmol h g) for this hybrid that is up to 370 times greater than that achieved from using bare g-CN (HRE, 0.75 μmol h g) with a quantum efficiency of 3.74% under visible light irradiation (λ = 420 nm). To better determine the photophysical characteristics of the CuP-induced charge antitrapping behavior, ultrafast time-resolved spectroscopy measurements were used to investigate the charge carriers' dynamics from femtosecond to nanosecond time domains. The experimental results clearly revealed that CuP can effectively enhance charge transfer and suppress photoelectron-hole recombination.

DOI 10.1021/acsami.9b01421
ISSN 1944-8252
Citation Wang W, Zhao X, Cao Y, Yan Z, Zhu R, Tao Y, et al. Copper Phosphide-Enhanced Lower Charge Trapping Occurrence in Graphitic-CN for Efficient Noble-Metal-Free Photocatalytic H Evolution. ACS Appl Mater Interfaces. 2019.

Related Applications, Forms & Industries