Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires.

Author(s) Zhang, Q.; Cui, Z.; Wei, Z.; Chang, S.Yee; Yang, L.; Zhao, Y.; Yang, Y.; Guan, Z.; Jiang, Y.; Fowlkes, J.; Yang, J.; Xu, D.; Chen, Y.; Xu, T.T.; Li, D.
Journal Nano Lett
Date Published 2017 May 11
Abstract

Nanowires of complex morphologies, such as kinked wires, have been recently synthesized and demonstrated for novel devices and applications. However, the effects of these morphologies on thermal transport have not been well studied. Through systematic experimental measurements, we show that single-crystalline, defect-free kinks in boron carbide nanowires can pose a thermal resistance up to ∼30 times larger than that of a straight wire segment of equivalent length. Analysis suggests that this pronounced resistance can be attributed to the combined effects of backscattering of highly focused phonons and required mode conversion at the kink. Interestingly, it is also found that instead of posing resistance, structural defects in the kink can actually assist phonon transport through the kink and reduce its resistance. Given the common kink-like wire morphology in nanoelectronic devices and required low thermal conductivity for thermoelectric devices, these findings have important implications in precise thermal management of electronic devices and thermoelectrics.

DOI 10.1021/acs.nanolett.7b00666
ISSN 1530-6992
Citation Zhang Q, Cui Z, Wei Z, Chang SY, Yang L, Zhao Y, et al. Defect Facilitated Phonon Transport through Kinks in Boron Carbide Nanowires. Nano Lett. 2017.

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