Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films.

Author(s) Lian, J.; Zhang, D.; Hong, R.; Qiu, P.; Lv, T.; Zhang, D.
Journal Nanomaterials (Basel)
Date Published 2018 Nov 07
Abstract

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O₂) was reported. Red-shift of λ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (E) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.

DOI 10.3390/nano8110922
ISSN 2079-4991
Citation Lian J, Zhang D, Hong R, Qiu P, Lv T, Zhang D. Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films. Nanomaterials (Basel). 2018;8(11).

Related Applications, Forms & Industries