Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET.

Author(s) Jang, W.Douk; Yoon, Y.Jun; Cho, M.Su; Jung, J.Hyeok; Lee, S.Ho; Jang, J.; Bae, J.H.; Kang, I.Man
Journal Micromachines (Basel)
Date Published 2019 Oct 31
Abstract

In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive band-to-band tunneling (BTBT) area can be achieved compared with the conventional core-shell VNWTFETs. The channel thickness (), the gate-metal height (), and the channel height () were considered as the design parameters for the optimization of device performances. The designed gate-metal-core VNWTFET exhibits outstanding performance, with an on-state current () of 80.9 μA/μm, off-state current () of 1.09 × 10 A/μm, threshold voltage () of 0.21 V, and subthreshold swing (SS) of 42.8 mV/dec. Therefore, the proposed device was demonstrated to be a promising logic device for low-power applications.

DOI 10.3390/mi10110749
ISSN 2072-666X
Citation Jang WD, Yoon YJ, Cho MS, Jung JH, Lee SH, Jang J, et al. Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET. Micromachines (Basel). 2019;10(11).