Title | Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory. |
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Authors | Qian, K.; Tay, R.Yingjie; Lin, M.F.; Chen, J.; Li, H.; Lin, J.; Wang, J.; Cai, G.; Nguyen, V.Cuong; Teo, E.Hang Tong; Chen, T.; Lee, P.See |
Journal | ACS Nano |
DOI | 10.1021/acsnano.6b07577 |
Abstract |
Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 10(4) s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms. |
Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory.