Electronic Level Alignment at an Indium Tin Oxide/PbI2 Interface and Its Applications for Organic Electronic Devices.

Author(s) Song, Q.; Lin, T.; Sun, X.; Chu, B.; Su, Z.; Yang, H.; Li, W.; Lee, C.Sing
Journal ACS Appl Mater Interfaces
Date Published 2018 Mar 02
Abstract

The electronic level alignment at the indium tin oxide (ITO)/PbIinterface is investigated by an ultraviolet photoelectron spectroscopy. An n-type conductivity property is found for PbIas well as a downward shift energy level at the ITO/PbIinterface. These indicate that PbIcan be used as an anode buffer layer for organic electronic devices. The power conversion efficiency of the organic solar cell based on tetraphenyldibenzoperiflanthene/Cplanar heterojunction is dramatically increased from 1.05 to 3.82%. Meanwhile, the thermally activated delayed fluorescence organic light-emitting diode based on 4,4',4″-tri(N-carbazolyl)triphenylamine-((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) shows a significantly reduced turn-on voltage and enhanced power efficiency from 6.26 to 18.60 lm/W. The improved performance is attributed to the high hole injection/extraction efficiency at the ITO/PbIinterface. Besides, the near-infrared (NIR) absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector (NIR-OPD) is dramatically increased, indicating that the PbIlayer can also be used as a template layer for the growth of the triclinic phase of PbPc. As a result, the optimized device shows an external quantum efficiency of 26.7% and a detectivity of 9.96 × 10jones at 900 nm, which are among the highest ones reported for organic NIR-OPDs.

DOI 10.1021/acsami.7b19376
ISSN 1944-8252
Citation Song Q, Lin T, Sun X, Chu B, Su Z, Yang H, et al. Electronic Level Alignment at an Indium Tin Oxide/PbI2 Interface and Its Applications for Organic Electronic Devices. ACS Appl Mater Interfaces. 2018.

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