Electronic structure and charge transport in nonstoichiometric tantalum oxide.

Author(s) Perevalov, T.V.; Gritsenko, V.A.; Gismatulin, A.A.; Voronkovskii, V.A.; Gerasimova, A.K.; Aliev, S.; Prosvirin, I.A.
Journal Nanotechnology
Date Published 2018 Jun 29
Abstract

The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaO grown by ion beam sputtering deposition was studied. The TaO film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaO is composed of TaO, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaO from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaO were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

DOI 10.1088/1361-6528/aaba4c
ISSN 1361-6528
Citation Perevalov TV, Gritsenko VA, Gismatulin AA, Voronkovskii VA, Gerasimova AK, V Aliev S, et al. Electronic structure and charge transport in nonstoichiometric tantalum oxide. Nanotechnology. 2018;29(26):264001.

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