Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide.

Author(s) Nemšák, S.; Gehlmann, M.; Kuo, C.T.; Lin, S.C.; Schlueter, C.; Mlynczak, E.; Lee, T.L.; Plucinski, L.; Ebert, H.; Di Marco, I.; Minár, J.; Schneider, C.M.; Fadley, C.S.
Journal Nat Commun
Date Published 2018 Aug 17
Abstract

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

DOI 10.1038/s41467-018-05823-z
ISSN 2041-1723
Citation Nemšák S, Gehlmann M, Kuo C-, Lin S-, Schlueter C, Mlynczak E, et al. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. Nat Commun. 2018;9(1):3306.

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