Author(s) Han, X.; Steffen, H.; Tong, X.; Yang, N.; Guo, X.Y.; Jiang, X.
Journal Chemistry
Date Published 2020 Jan 21

Cubic silicon carbide (3C-SiC) material feature a suitable band gap and high resistance to photo corrosion. It thus has been emerged as a promising semiconductor for hydrogen evolution. Herein, the relationship between the photoelectrochemical properties and the microstructures of different SiC materials is demonstrated. For visible-light derived water splitting to hydrogen production, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are applied as the photocathodes. The epitaxial 3C-SiC film presents the highest photoelectrochemical activity for hydrogen evolution, because of its perfect (001) orientation, high phase purity, low resistance, and negative conduction band energy level. This finding offers a strategy to design SiC-based photocathodes with superior photoelectrochemical performances.

DOI 10.1002/chem.201905218
ISSN 1521-3765
Citation Chemistry. 2020.

Related Applications, Forms & Industries