Extraction of -, -- and -- Characteristics for -Type Silicon/Intrinsic Ultrananocrystalline Diamond/-Type Nanocrystalline Iron Disilicide Heterojunction Photodiodes.

Author(s) Chaleawpong, R.; Promros, N.; Charoenyuenyao, P.; Hanada, K.; Chen, L.; Yoshitake, T.
Journal J Nanosci Nanotechnol
Date Published 2020 Jan 01

The production of -type silicon/intrinsic ultrananocrystalline diamond/-type nanocrystalline iron disilicide heterojunction devices was conducted via coaxial arc plasma deposition and pulsed laser deposition. The results of current density-voltage () curves justified a large leakage current along with minimal response under illumination. A recombination process controls the mechanism for carrier portage in the zone of ≤ 0.16 V, while a space-charge-limited current process governs the carrier portage mechanism in the circumstance of value beyond 0.16 V. Frequency () dependent conductance ()- and capacitance ()- curves were measured to extract the series resistance () and density of the interface state (). On the basis of extraction in the manner of Nicollian-Brews, the value of rose with abatement. With zero bias voltage applied, the value of was 189.84 Ω at 2 MHz and rose to 715.10 Ω at 20 kHz. The acquired may be attributable to the occurrence of in the neutral zones as well as Ohmic contact. The values for , which were extracted in the manner of Hill-Coleman, were 1.23×10 eV cm at 2 MHz and 6.51×10 eV cm at 20 kHz. This result was an indicator of the occurrence of interface states at the zone of the junction interface performing as a source of leakage current and a trap center for the carriers originated by light.

DOI 10.1166/jnn.2020.17295
ISSN 1533-4899
Citation J Nanosci Nanotechnol. 2020;20(1):433441.

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