Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires.

Author(s) Hsu, H.F.; Chen, C.A.; Liu, S.W.; Tang, C.K.
Journal Nanoscale Res Lett
Date Published 2017 Dec
Abstract

Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An Osensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O, the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O.

DOI 10.1186/s11671-017-1955-6
ISSN 1931-7573
Citation Hsu H-, Chen C-, Liu S-, Tang C-. Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires. Nanoscale Res Lett. 2017;12(1):182.

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