Facile loading of cobalt oxide on bismuth vanadate: Proved construction of p-n junction for efficient photoelectrochemical water oxidation.

Author(s) Huang, J.; Liu, T.; Wang, R.; Zhang, M.; Wang, L.; She, H.; Wang, Q.
Journal J Colloid Interface Sci
Date Published 2020 Jun 15
Abstract

Cobalt oxide is an excellent water oxidation cocatalyst used in photoelectrochemical (PEC) water splitting field. Finding a facial way to load cobalt oxide on a semiconductor anode is important to effectively realize PEC water splitting on a large scale. In this work, a simple impregnation and calcination method is developed to fabricate CoO/BiVO anode. The constructed CoO/BiVO anode provides a photocurrent of 3.1 mA cm at 1.23 V vs. RHE, about 2.8 times that of BiVO anode (1.1 mA cm). Furthermore, both the charge separation and injection efficiency are improved by loading CoO nanoparticles onto the BiVO layer. Importantly, input voltage-output current characteristic curves are used for the first time to prove the formation of p-n junction between CoO and BiVO, which benefits to the separation of photogenerated holes and electrons. All results indicate that the impregnation and calcination method is efficacious for facile fabrication of CoO/BiVO photoanode with high performance.

DOI 10.1016/j.jcis.2020.02.109
ISSN 1095-7103
Citation Huang J, Liu T, Wang R, Zhang M, Wang L, She H, et al. Facile loading of cobalt oxide on bismuth vanadate: Proved construction of p-n junction for efficient photoelectrochemical water oxidation. J Colloid Interface Sci. 2020;570:89-98.

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