Gallium indium phosphide microstructures with suppressed photoluminescence for applications in nonlinear optics.

Author(s) De Luca, E.; Visser, D.; Anand, S.; Swillo, M.
Journal Opt Lett
Date Published 2019 Nov 01

Gallium indium phosphide (GaInP), lattice matched to gallium arsenide, shows remarkable second-order nonlinear properties, as well as strong photoluminescence (PL) due to its direct band gap. By measuring the second-harmonic generation from the GaInP microwaveguide (0.2×11×1300  μm) before and after stimulating intrinsic photobleaching, we demonstrate that the PL could be strongly suppressed (-34  dB), leaving the nonlinear properties unchanged, making it suitable for low-noise applications.

DOI 10.1364/OL.44.005117
ISSN 1539-4794
Citation Opt Lett. 2019;44(21):51175120.

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