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Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition.

Author(s) Nagano, T.; Sato, K.; Kawahara, K.
Journal Membranes (Basel)
Date Published 2020 Jan 06
Abstract

An amorphous silicon carbide (SiC) membrane was synthesized by counter-diffusion chemical vapor deposition (CDCVD) using silacyclobutane (SCB) at 788 K. The SiC membrane on a Ni-γ-alumina (AlO) α-coated AlO porous support possessed a H permeance of 1.2 × 10 mol·m·s·Pa and an excellent H/CO selectivity of 2600 at 673 K. The intermittent action of H reaction gas supply and vacuum inside porous support was very effective to supply source gas inside mesoporous intermediate layer. A SiC active layer was formed inside the Ni-γ-AlO intermediate layer. The thermal expansion coefficient mismatch between the SiC active layer and Ni-γ-AlO-coated α-AlO porous support was eased by the low decomposition temperature of the SiC source and the membrane structure.

DOI 10.3390/membranes10010011
ISSN 2077-0375
Citation Nagano T, Sato K, Kawahara K. Gas Permeation Property of Silicon Carbide Membranes Synthesized by Counter-Diffusion Chemical Vapor Deposition. Membranes (Basel). 2020;10(1).

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