High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

Author(s) Woods, K.N.; Chiang, T.H.; Plassmeyer, P.N.; Kast, M.G.; Lygo, A.C.; Grealish, A.K.; Boettcher, S.W.; Page, C.J.
Journal ACS Appl Mater Interfaces
Date Published 2017 Mar 29
Abstract

Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal-insulator-semiconductor (MIS) field-effect transistors. Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient alternative. We report an all-inorganic aqueous solution route to amorphous lanthanum zirconium oxide (La2Zr2O7, LZO) dielectric thin films. LZO films were spin-cast from aqueous solutions of metal nitrates and annealed at temperatures between 300 and 600 °C to produce dense, defect-free, and smooth films with subnanometer roughness. Dielectric constants of 12.2-16.4 and loss tangents <0.6% were obtained for MIS devices utilizing LZO as the dielectric layer (1 kHz). Leakage currents <10(-7) A cm(-2) at 4 MV cm(-1) were measured for samples annealed at 600 °C. The excellent surface morphology, high dielectric constants, and low leakage current densities makes these LZO dielectrics promising candidates for thin-film transistor devices.

DOI 10.1021/acsami.7b00915
ISSN 1944-8252
Citation Woods KN, Chiang T-, Plassmeyer PN, Kast MG, Lygo AC, Grealish AK, et al. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors. ACS Appl Mater Interfaces. 2017;9(12):10897-10903.

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