Indium antimonide uncooled photodetector with dual band photoresponse in the infrared and millimeter wave range.

Author(s) Tong, J.; Suo, F.; Zhou, W.; Qu, Y.; Yao, N.; Hu, T.; Huang, Z.; Zhang, D.Hua
Journal Opt Express
Date Published 2019 Oct 14
Abstract

All-InSb film-based and spiral antenna-assisted Au-InSb-Au metal-semiconductor-metal detector is reported with dual-band photoresponse in the infrared (IR) and millimeter wave range. At IR, the detector exhibits a long wavelength 100% cut-off at 7.3 µm. Under an applied bias of 5 mA, the uncooled blackbody responsivity and specific detectivity are 3.5 A/W and 1×10 Jones, respectively. The f value measured at 2.94 µm is 75 KHz, corresponding to a detector rise speed of 4.7 µs. At millimeter wave range, the detector shows a narrowband response determined by the coupling of the antenna. A voltage responsivity of 25 V/W is achieved at 167 GHz (1.796 mm) under an applied bias of 25 mA, and the corresponding noise equivalent power (NEP) is 1.0×10 WHz, which can be improved to 1.8×10 WHz if normalized to the real active semiconductor area. A f value of 17.5 KHz, corresponding to a detector rise speed of 20 µs is achieved in this range. A proof of principle for IR-modulated photoresponse for millimeter wave is achieved with a maximum modulation depth of 47.5%. This All-InSb film-based detector and the modulation are promising for future novel optoelectronic devices in IR and millimeter waves.

DOI 10.1364/OE.27.030763
ISSN 1094-4087
Citation Tong J, Suo F, Zhou W, Qu Y, Yao N, Hu T, et al. Indium antimonide uncooled photodetector with dual band photoresponse in the infrared and millimeter wave range. Opt Express. 2019;27(21):30763-30772.

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