Indium Zinc Oxide Thin-Film Transistors with Ultraviolet Post-Annealing Treatment.

Author(s) Ao, Z.T.; Shan, F.; Guo, H.B.; Kim, H.S.; Lee, J.Y.; Kim, S.J.
Journal J Nanosci Nanotechnol
Date Published 2019 Oct 01
Abstract

Ultraviolet treatment (UV) light was performed for indium zinc oxide thin-film transistors (TFTs) for different time so as to study the effects of post-annealing on electrical characteristic of TFTs. Electrical characteristic results proved that the value of high mobility after UV post-annealing process (2 mW/cm². for 30 s was obviously enhanced, and it had an acceptable on/off ratio, reasonable threshold voltage, and subthreshold swing. Among them, the value of the electronic mobility is 2.41 cm²/Vs, the threshold voltage value is 8.31 V, the on/off current ratio value is 2×2 × 10, and the subthreshold swing value is 1.13 V/dec.

DOI 10.1166/jnn.2019.16996
ISSN 1533-4880
Citation Ao Z-, Shan F, Guo H-, Kim H-, Lee J-, Kim S-. Indium Zinc Oxide Thin-Film Transistors with Ultraviolet Post-Annealing Treatment. J Nanosci Nanotechnol. 2019;19(10):6170-6173.

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