Influence of Post-Heat Treatment of ZnO:Al Transparent Electrode for Copper Indium Gallium Selenide Thin Film Solar Cell.

Author(s) Eom, T.; Park, J.Eun; Park, S.Yong; Park, J.Hoon; Bweupe, J.; Lim, D.
Journal J Nanosci Nanotechnol
Date Published 2018 Sep 01
Abstract

Copper indium gallium selenide (CIGS) thin film solar cells have been regarded as a candidate for energy conversion devices owing to their high absorption coefficient, high temperature stability, and low cost. ZnO:Al thin film is commonly used in CIGS solar cells as a window layer. In this study, ZnO:Al films were deposited on glass under various post-heat temperature using RF sputtering to observe the characteristics of ZnO:Al films such as Hall mobility, carrier concentration, and resistivity; subsequently, the ZnO:Al films were applied to a CIGS solar cell as a window. CIGS solar cells fabricated with various ZnO:Al films were analyzed in order to investigate their influence. The test results showed that the improvement of ZnO:Al characteristics affects Jsc and Voc in the solar cell through reduced recombination and increase of optical property.

DOI 10.1166/jnn.2018.15685
ISSN 1533-4880
Citation Eom T, Park JE, Park SY, Park JH, Bweupe J, Lim D. Influence of Post-Heat Treatment of ZnO:Al Transparent Electrode for Copper Indium Gallium Selenide Thin Film Solar Cell. J Nanosci Nanotechnol. 2018;18(9):6532-6535.

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