Influence of the Sintering Temperature of Al-Doped Higher Manganese Silicide for Improved Thermoelectric Properties.

Author(s) Son, S.Y.; Baek, Y.J.; Beck, J.H.; Kim, J.B.; Yang, S.H.; Kang, Y.H.; Hyun, S.K.
Journal J Nanosci Nanotechnol
Date Published 2019 Mar 01
Abstract

Higher manganese silicide is generally used in thermoelectric devices between 700 K and 900 K. MnSiAl samples were fabricated by two continuous solid-state reactions followed by hot pressing because the electrical conductivity of all the samples is strongly dependent on Al doping, showing superior thermoelectric performance to the as-synthesized higher manganese silicide. The solid-state-reaction was performed at 1173 K for 6 hours. The effects of the sintering temperature were examined by sintering at three different temperatures: 1273 K, 1323 K and 1373 K. For the surface, microstructural, and electrical properties, scanning electron microscopy, X-ray diffraction, and a series of electric conductivity, Seebeck coefficient, and thermal conductivity analyses were conducted, respectively. As a result, the optimal process temperature for Al-doped higher manganese silicide using a hot-press technique was determined.

DOI 10.1166/jnn.2019.16188
ISSN 1533-4880
Citation J Nanosci Nanotechnol. 2019;19(3):16991703.

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