Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions.

Author(s) Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M.
Journal Sensors (Basel)
Date Published 2018 Nov 03
Abstract

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 µm.

DOI 10.3390/s18113755
ISSN 1424-8220
Citation Gioffré M, Coppola G, Iodice M, Casalino M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors (Basel). 2018;18(11).

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