Interface engineering using Y2O3 scaffold to enhance the thermoelectric performance of CsSnI3 thin film

Author(s) Baranwal, A.Kumar; Saini, S.; Wang, Z.; Hirotani, D.; Yabuki, T.; Iikubo, S.; Miyazaki, K.; Hayase, S.
Journal Organic Electronics
Date Published 01/2020
Abstract Solution processed Cesium Tin halide perovskites (CsSnI3) are inorganic crystal to be explored for thermoelectric applications. Here, we report a novel strategy using an inorganic Y2O3 scaffold to improve the thermoelectric performance. The additional Y2O3 influence the CsSnI3 crystal growth and favor more conducting behavior with intrinsic defects (Sn4+) formation. Therefore, the resulting solution processed composite film Y2O3/CsSnI3 show much improved electrical conductivity of ~310 S/cm as compared to ~98 S/cm of pristine CsSnI3 film. Under the influence of Y2O3, the resulting phonon scattering path was enhanced significantly due to formed defects/vacancy and reduced CsSnI3 crystal size, which showed a reduction in thermal conductivity from 0.74 W/mK to 0.28 W/mK. This work paves a new paradigm to improve the thermoelectric performance of solution based thermoelectric generator.
DOI 10.1016/j.orgel.2019.105488
ISSN 1566-1199
Citation Organic Electronics. 2020;76:105488.

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