Interfacial Chemistry Induced Modulation of Schottky Barrier Heights: in-situ Measurements of the Pt - Amorphous Indium Gallium Zinc Oxide Interface using X-ray Photoelectron Spectroscopy.

Author(s) Flynn, B.; Oleksak, R.; Thevuthasan, S.; Herman, G.S.
Journal ACS Appl Mater Interfaces
Date Published 2018 Jan 09

A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In-situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In3+ to In0, that occurs during deposition of Pt on to the a-IGZO surface in ultra-high vacuum. Post-annealing and controlling the background ambient O2 pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

DOI 10.1021/acsami.7b18674
ISSN 1944-8252
Citation ACS Appl Mater Interfaces. 2018.

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