Author(s) Zeng, Y.C.; Sie, S.F.; Suriyawong, N.; Aragaw, B.Asefa; Bin Shi, J.; Lee, M.W.
Journal J Colloid Interface Sci
Date Published 2017 Feb 15

We present a new ternary semiconductor absorber material - Pb1-xSnxS - for solar cells. Pb1-xSnxS nanocrystals (NCs) were synthesized using the successive ionic layer adsorption reaction (SILAR) process. Energy-dispersive X-ray spectroscopy revealed the Sn ratio for a sample prepared with five SILAR cycles to be x=0.55 (i.e. non-stoichiometric formula Pb0.45Sn0.55S). The optical spectra revealed that the energy gap Eg of the Pb1-xSnxS NCs decreased with an increasing number of SILAR cycles n, with Eg=1.67eV for the sample with n=5. Liquid-junction Pb1-xSnxS quantum dot-sensitized solar cells were fabricated using the polysulfide electrolyte. The best cell yielded a short-circuit current density Jsc of 10.1mA/cm(2), an open circuit voltage of 0.43V, a fill factor FF of 50% and an efficiency of 2.17% under 1 sun. The external quantum efficiency spectrum (EQE) covered a spectral range of 300-800nm with a maximum EQE of ∼67% at λ=650nm. At the reduced light of 0.1 sun, the efficiency increased to 3.31% (with a normalized Jsc=17.7mA/cm(2)) - a respectable efficiency for a new sensitizer. This work demonstrates that Pb1-xSnxS shows potential as a solar cell absorber.

DOI 10.1016/j.jcis.2016.11.005
ISSN 1095-7103
Citation J Colloid Interface Sci. 2017;488:246250.

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