Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate.

Author(s) Colangelo, F.; Piazza, V.; Coletti, C.; Roddaro, S.; Beltram, F.; Pingue, P.
Journal Nanotechnology
Date Published 2017 Mar 10

We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman (μ-Raman) spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy.

DOI 10.1088/1361-6528/aa59c7
ISSN 1361-6528
Citation Nanotechnology. 2017;28(10):105709.

Related Applications, Forms & Industries