Morphology and composition controlled Ga(x)In(1-x)Sb nanowires: understanding ternary antimonide growth.

Author(s) Ghalamestani, S.Gorji; Ek, M.; Ghasemi, M.; Caroff, P.; Johansson, J.; Dick, K.A.
Journal Nanoscale
Date Published 2014 Jan 21

Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ~100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various GaxIn1-xSb-based nanowire devices.

DOI 10.1039/c3nr05079c
ISSN 2040-3372
Citation Nanoscale. 2014;6(2):108692.

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