Multi-functional spintronic devices based on boron- or aluminum-doped silicene nanoribbons.

Author(s) Liu, Y.S.; Dong, Y.J.; Zhang, J.; Yu, H.L.; Feng, J.F.; Yang, X.F.
Journal Nanotechnology
Date Published 2018 Mar 23
Abstract

Zigzag silicene nanoribbons (ZSiNRs) in the ferromagnetic edge ordering have a metallic behavior, which limits their applications in spintronics. Here a robustly half-metallic property is achieved by the boron substitution doping at the edge of ZSiNRs. When the impurity atom is replaced by the aluminum atom, the doped ZSiNRs possess a spin semiconducting property. Its band gap is suppressed with the increase of ribbon's width, and a pure thermal spin current is achieved by modulating ribbon's width. Moreover, a negative differential thermoelectric resistance in the thermal charge current appears as the temperature gradient increases, which originates from the fact that the spin-up and spin-down thermal charge currents have diverse increasing rates at different temperature gradient regions. Our results put forward a promising route to design multi-functional spintronic devices which may be applied in future low-power-consumption technologies.

DOI 10.1088/1361-6528/aaa999
ISSN 1361-6528
Citation Liu YS, Dong YJ, Zhang J, Yu HL, Feng JF, Yang XF. Multi-functional spintronic devices based on boron- or aluminum-doped silicene nanoribbons. Nanotechnology. 2018;29(12):125201.