Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide -Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer.

Author(s) Kim, T.Kyoung; Yoon, Y.Jin; Oh, S.Kyu; Cha, Y.J.; Hong, I.Yeol; Cho, M.Uk; Hong, C.H.; Choi, H.Kyw; Kwak, J.Seop
Journal J Nanosci Nanotechnol
Date Published 2018 Sep 01
Abstract

In order to improve EQE, we have investigated on the role of multilayer graphene (MLG) on the electrical and optical properties of GaN based light-emitting diodes (LEDs) with ultrathin ITO (5 nm or 10 nm)/p-GaN contacts. The MLG was transferred on the ITO/p-GaN to decrease sheet resistance of thin ITO p-electrode and improve the current spreading of LEDs. The LEDs with the ITO 5 nm and MLG/ITO 5 nm structures showed 3.25 and 3.06 V at 20 mA, and 11.69 and 13.02 mW/sr at 400 mA, respectively. After forming MLG on ITO 5 nm, the electro-optical properties were enhanced. Furthermore, the GaN based-LEDs applied to the ITO 10 nm, and MLG/ITO (10 nm) structures showed 2.95 and 3.06 V at 20 mA, and 20.28 and 16.74 mW/sr at 400 mA, respectively. The sheet resistance of the MLG transferred to ITO 5 nm was decreased approximately four fold compared to ITO 5 nm. On the other hand, the ITO 10 nm and MLG/ITO 10 nm showed a similar sheet resistance; the transmittance of the LEDs with ITO 10 nm decreased to 16% due to MLG formation on ITO. This suggests that the relationship between the sheet resistance and transmittance according to the ITO film thickness affected the electro-optical properties of the LEDs with a transparent p-electrode with the MLG/ITO dual structure.

DOI 10.1166/jnn.2018.15603
ISSN 1533-4880
Citation Kim TK, Yoon YJ, Oh SK, Cha Y-, Hong IY, Cho MU, et al. Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide -Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer. J Nanosci Nanotechnol. 2018;18(9):6106-6111.

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