Author(s) Gu, T.; Gao, J.; Ostroumov, E.E.; Jeong, H.; Wu, F.; Fardel, R.; Yao, N.; Priestley, R.D.; Scholes, G.D.; Loo, Y.L.; Arnold, C.B.
Journal ACS Appl Mater Interfaces
Date Published 2017 May 09

Embedding metallic and semiconductor nanoparticles in a chalcogenide glass matrix effectively modifies the optical properties. Such nanostructured materials could play an important role in optoelectronic devices, catalysis and imaging applications. In this work, we fabricate and characterize germanium nanocrystals (Ge NCs) embedded in arsenic sulfide thin films by pulsed laser ablation in aliphatic amine solutions. Unstable surface termination of aliphatic groups and stable termination by amine on Ge NCs are indicated by Raman and Fourier-transform infrared spectroscopy measurements, respectively. A broadband photoluminescence (PL) in the visible range is observed for the amine functionalized Ge NCs. A noticeable enhancement of fluorescence is observed for Ge NCs in arsenic sulfide, after annealing to remove the residual solvent of the glass matrix.

DOI 10.1021/acsami.7b02520
ISSN 1944-8252
Citation ACS Appl Mater Interfaces. 2017.

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