Photoresponses of Zinc Tin Oxide Thin-Film Transistor.

Author(s) Huang, W.Lun; Yang, C.C.; Chang, S.P.; Chang, S.J.
Journal J Nanosci Nanotechnol
Date Published 2020 Mar 01
Abstract

In this study, the optical and electrical properties of a zinc tin oxide (ZTO) thin-film transistor (TFT) were investigated. The TFT was fabricated using ZTO as the active layer, which was deposited by a radio frequency magnetron sputtering system, to form an ultraviolet (UV) photodetector. The device has a threshold voltage of 0.48 V, field-effect mobility of 1.47 cm²/Vs in the saturation region, on/off drain current ratio of 2×10, and subthreshold swing of 0.45 V/decade in a dark environment. Moreover, as a UV photodetector, the device has a long photoresponse time, responsivity of 0.329 A/W, and rejection ratio of 3.19×10⁴ at a gate voltage of -15 V under illumination of wavelength 300 nm.

DOI 10.1166/jnn.2020.17159
ISSN 1533-4899
Citation Huang WL, Yang C-, Chang S-, Chang S-. Photoresponses of Zinc Tin Oxide Thin-Film Transistor. J Nanosci Nanotechnol. 2020;20(3):1704-1708.

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