Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection.

Author(s) Kang, B.Ha; Kim, W.G.; Chung, J.; Lee, J.Hyeok; Kim, H.Jae
Journal ACS Appl Mater Interfaces
Date Published 2018 Feb 28
Abstract

A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 10, and a detectivity of 6.93 × 10Jones under 635 nm light illumination.

DOI 10.1021/acsami.7b17897
ISSN 1944-8252
Citation Kang BH, Kim W-, Chung J, Lee JH, Kim HJ. Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection. ACS Appl Mater Interfaces. 2018;10(8):7223-7230.

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