Title | Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress. |
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Authors | Liu, Y.; Niu, J.; Wang, H.; Han, G.; Zhang, C.; Feng, Q.; Zhang, J.; Hao, Y. |
Journal | Nanoscale Res Lett |
DOI | 10.1186/s11671-017-1913-3 |
Abstract |
Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high-quality SiO2/Si interfacial layer between the high-κ dielectric and channels. Strained Ge QW pMOSFETs achieve the significantly improved effective hole mobility μ eff as compared with the relaxed Si and Ge control devices. At an inversion charge density of Q inv of 2 × 10(12) cm(-2), Ge QW pMOSFETs on SOI exhibit a 104% μ eff enhancement over relaxed Ge control transistors. It is also demonstrated that μ eff of Ge pMOSFETs on SOI can be further boosted by applying an external uniaxial compressive strain. |
Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.