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Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.
Title Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.
Authors Liu, Y.; Niu, J.; Wang, H.; Han, G.; Zhang, C.; Feng, Q.; Zhang, J.; Hao, Y.
Journal Nanoscale Res Lett
DOI 10.1186/s11671-017-1913-3
Abstract

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high-quality SiO2/Si interfacial layer between the high-κ dielectric and channels. Strained Ge QW pMOSFETs achieve the significantly improved effective hole mobility μ eff as compared with the relaxed Si and Ge control devices. At an inversion charge density of Q inv of 2 × 10(12) cm(-2), Ge QW pMOSFETs on SOI exhibit a 104% μ eff enhancement over relaxed Ge control transistors. It is also demonstrated that μ eff of Ge pMOSFETs on SOI can be further boosted by applying an external uniaxial compressive strain.