Study of Double Layer Indium Tin Oxide in Silicon Hetero-Junction Solar Cells.

Author(s) Lee, A.Reum; Lee, D.Won; Lee, S.Hee; Bhopal, M.Fahad; Kim, H.Jun; Lim, K.J.; Shin, W.S.; Lee, S.Hong; Kim, J.
Journal J Nanosci Nanotechnol
Date Published 2020 Jan 01
Abstract

In this literature, we discussed the effect of anti-reflection coating of silicon heterojunction (SHJ) solar cells with different characteristics of double layered indium tin oxide (ITO/ITO) structure. Firstly, the OPAL 2 simulation was performed to optimize the values of the photo generation-current density of ITO/ITO/Si device structures. Afterwards, experimental work was conducted by depositing ITO on the SHJ solar cell to analyze the anti-reflection coating effect. ITO was deposited on the SHJ solar cell for 90 to 180 seconds by varying the oxygen flow rate. The highest short-circuit current density of 39.25 mA/cm² was obtained when ITO was deposited for 150 seconds, which was higher than the short-circuit current density of non-deposited cell of ITO (38 mA/cm²). The efficiency of the SHJ solar cell increased by about 2% after additional ITO deposition to 20.75%, which was due to the improvement of short-circuit current density by ITO deposition. The double layer ITO helped to improve the efficiency of SHJ solar cell by increasing light absorption in a silicon wafer.

DOI 10.1166/jnn.2020.17242
ISSN 1533-4899
Citation Lee AR, Lee DW, Lee SH, Bhopal MF, Kim HJ, Lim K-, et al. Study of Double Layer Indium Tin Oxide in Silicon Hetero-Junction Solar Cells. J Nanosci Nanotechnol. 2020;20(1):161-167.

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