Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping.

Author(s) Xu, H.; Xu, M.; Li, M.; Chen, Z.; Zou, J.; Wu, W.; Qiao, X.; Tao, H.; Wang, L.; Ning, H.; Ma, D.; Peng, J.
Journal ACS Appl Mater Interfaces
Date Published 2019 Feb 06

Praseodymium-doped indium zinc oxide (PrIZO) has been employed as the channel layer of thin-film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light-induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high-field-effect mobility of 26.3 cm/V s, SS value of 0.28 V/decade, and I/ I ratio of 10. X-ray photoelectron spectroscopy, microwave photoconductivity decay, and photoluminescence spectra were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.

DOI 10.1021/acsami.8b18329
ISSN 1944-8252
Citation ACS Appl Mater Interfaces. 2019;11(5):52325239.

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