Two-Dimensional Hydroxyl-Functionalized and Carbon-Deficient Scandium Carbide, ScC OH, a Direct Band Gap Semiconductor.

Author(s) Zhou, J.; Zha, X.H.; Yildizhan, M.; Eklund, P.; Xue, J.; Liao, M.; Persson, P.O.Å.; Du, S.; Huang, Q.
Journal ACS Nano
Date Published 2019 Feb 26

Two-dimensional (2D) materials have attracted intense attention in nanoscience and nanotechnology due to their outstanding properties. Among these materials, the emerging family of 2D transition metal carbides, carbonitrides, and nitrides (referred to as MXenes) stands out because of the vast available chemical space for tuning materials chemistry and surface termination, offering opportunities for property tailoring. Specifically, semiconducting properties are needed to enable utilization in optoelectronics, but direct band gaps are experimentally challenging to achieve in these 2D carbides. Here, we demonstrate the fabrication of 2D hydroxyl-functionalized and carbon-deficient scandium carbide, namely, ScC OH, by selective etching of a layered parent ScAlC compound. The 2D configuration is determined as a direct band gap semiconductor, with an experimentally measured band gap approximated at 2.5 eV. Furthermore, this ScC OH-based device exhibits excellent photoresponse in the ultraviolet-visible light region (responsivity of 0.125 A/W at 360 nm/10 V, and quantum efficiency of 43%). Thus, this 2D ScC OH direct band gap semiconductor may find applications in visible light detectors, photocatalytic chemistry, and optoelectronic devices.

DOI 10.1021/acsnano.8b06279
ISSN 1936-086X
Citation ACS Nano. 2019;13(2):11951203.

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