Author(s) Ortiz-Dosal, L.Carlos; Ángeles-Robles, G.; Kolosovas-Machuca, E.Samuel
Journal J Immunoassay Immunochem
Date Published 2018 Sep 06

Hafnium(IV) oxide is a material with properties that can increase the sensitivity, durability, and reliability of biosensors made from silicon dioxide and other semiconductor materials due to its high dielectric constant, thermodynamic stability, and the simplicity with which it can be deposited. This work describes the use of this material in biosensors based on field-effect transistors to detect ions and DNA, in immunosensors to detect an antigen-antibody complex, its use as a contrast material in computed tomography scans and the possibility of using it in optic biosensors in the infrared region. Its low cost and versatility in the field of biosensors is underscored.

DOI 10.1080/15321819.2018.1517090
ISSN 1532-4230
Citation J Immunoassay Immunochem. 2018:114.

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