Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

Author(s) Wu, C.H.; Chang, K.M.; Chen, Y.M.; Huang, B.W.; Zhang, Y.X.; Wang, S.J.
Journal J Nanosci Nanotechnol
Date Published 2018 Mar 01
Abstract

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.

DOI 10.1166/jnn.2018.14976
ISSN 1533-4880
Citation Wu C-, Chang K-, Chen Y-, Huang B-, Zhang Y-, Wang S-. Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique. J Nanosci Nanotechnol. 2018;18(3):1917-1921.

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