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Silicon Arsenide Sputtering Target

Linear Formula:

Si-As

ORDER

Product	Product Code	ORDER	SAFETY DATA	Technical data
(2N) 99% Silicon Arsenide Sputtering Target	SI-AS-02-ST	Pricing Add to cart only	SDS >	Data Sheet >
(2N5) 99.5% Silicon Arsenide Sputtering Target	SI-AS-025-ST	Pricing Add to cart only	SDS >	Data Sheet >
(3N) 99.9% Silicon Arsenide Sputtering Target	SI-AS-03-ST	Pricing Add to cart only	SDS >	Data Sheet >
(3N5) 99.95% Silicon Arsenide Sputtering Target	SI-AS-035-ST	Pricing Add to cart only	SDS >	Data Sheet >
(4N) 99.99% Silicon Arsenide Sputtering Target	SI-AS-04-ST	Pricing Add to cart only	SDS >	Data Sheet >
(5N) 99.999% Silicon Arsenide Sputtering Target	SI-AS-05-ST	Pricing Add to cart only	SDS >	Data Sheet >

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Silicon Arsenide Sputtering Target Properties (Theoretical)

Appearance	Target
Melting Point	N/A
Boiling Point	N/A
Density	N/A
Solubility in H2O	N/A

Silicon Arsenide Sputtering Target Health & Safety Information

Signal Word	N/A
Hazard Statements	N/A
Hazard Codes	N/A
Risk Codes	N/A
Safety Statements	N/A
Transport Information	N/A

About Silicon Arsenide Sputtering Target

American Elements specializes in producing high purity Silicon Arsenide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or Arsenide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar, or plate form, as well as other machined shapes. We also produce Silicon as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.

Synonyms

N/A

Chemical Identifiers

Linear Formula	Si-As
Beilstein/Reaxys No.
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

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Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s² 3p². The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. The number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d¹⁰ 4s² 4p³. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Arsenic is found in numerous minerals including arsenolite (As₂O₃), arsenopyrite (FeAsS), loellingite (FeAs₂), orpiment (As₂S₃), and realgar (As₄S₄). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.