Silicon Carbide Powder




Product Code Available Product Forms Request A Quote
SI-C-02-P (2N) 99% Silicon Carbide Powder Request
SI-C-025-P (2N5) 99.5% Silicon Carbide Powder Request
SI-C-03-P (3N) 99.9% Silicon Carbide Powder Request
SI-C-035-P (3N5) 99.95% Silicon Carbide Powder Request
SI-C-04-P (4N) 99.99% Silicon Carbide Powder Request
SI-C-05-P (5N) 99.999% Silicon Carbide Powder Request


Compound Formula SiC
Molecular Weight 40.1
Appearance Silvery
Melting Point N/A
Boiling Point N/A
Density 3.22 g/cm3
Exact Mass 39.976927
Monoisotopic Mass 39.976927

Health & Safety Info  |  MSDS / SDS

Signal Word Warning
Hazard Statements H315-H319-H335
Hazard Codes Xi
Risk Codes 36/37/38
Safety Statements 26-36
RTECS Number VW0450000
Transport Information N/A
WGK Germany 3
Globally Harmonized System of Classification and Labelling (GHS) N/A


Carbide IonAmerican Elements specializes in producing high purity Silicon Carbide Powder with the smallest possible average grain sizes for use in preparation of pressed and bonded sputtering targets and in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Powders are also useful in any application where high surface areas are desired such as water treatment and in fuel cell and solar applications. Nanoparticles also produce very high surface areas. Our standard Powder particle sizes average in the range of - 325 mesh, - 100 mesh, 10-50 microns and submicron (< 1 micron). We can also provide many materials in the nanoscale range. Like diamond, a pure carbon compound, Carbide compounds tend to be extremely hard, refractory and resistant to wear, corrosion and heat, making them excellent candidates for coatings for drills and other tools. They often have other valuable properties in combination with toughness, such as electrical conductivity, low thermal expansion and abrasiveness.


methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic

Chemical Identifiers

Formula SiC
CAS 409-21-2
Pubchem CID 9863
MDL MFCD00049531
EC No. 206-991-8
IUPAC Name methanidylidynesilicon
Beilstein Registry No. N/A
SMILES [C-]#[Si+]
InchI Identifier 1\/CSi\/c1-2

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.

Related Products

SiSee more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. The number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.


Recent Research & Development for Silicon

  • Proposed high-speed micron-scale spatial light valve based on a silicon-graphene hybrid structure. Qiu C, Pan T, Gao W, Liu R, Su Y, Soref R. Opt Lett. 5-50-2015
  • Surface Coating Constraint Induced Self-Discharging of Silicon Nanoparticles as Anodes for Lithium Ion Batteries. Luo L, Zhao P, Yang H, Liu B, Zhang JG, Cui Y, Yu G, Zhang S, Wang CM. Nano Lett. 9/30/2015
  • Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells. Park J, Shin C, Park H, Jung J, Lee YJ, Bong S, Dao VA, Balaji N, Yi J. J Nanosci Nanotechnol. 9/30/2015
  • Robust postfabrication trimming of ultracompact resonators on silicon on insulator with relaxed requirements on resolution and alignment. Alipour P, Atabaki AH, Askari M, Adibi A, Eftekhar AA. Opt Lett. 9/30/2015
  • Optimizing pin-printed and hydrosilylated microarray spot density on porous silicon platforms. McCall DT, Zhang Y, Hook DJ, Bright FV. Langmuir. 9/29/2015
  • On the thermodynamically stable amorphous phase of polymer-derived silicon oxycarbide. Yu L, Raj R. Sci Rep. 9/28/2015
  • Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon. Hudait MK, Clavel MB, Goley PS, Xie Y, Heremans J. ACS Appl Mater Interfaces. 9/25/2015
  • Surface Morphology and Structural Modification Induced by Femtosecond Pulses in Hydrogenated Amorphous Silicon Films. Almeida GF, Cardoso MR, Aoki PH, Lima JJ Jr, Costa Lda F, Rodrigues CA, Constantino CJ, Mendoncal CR. J Nanosci Nanotechnol. 6/11/2015
  • Cell culture on hydrophilicity-controlled silicon nitride surfaces. Masuda Y, Inami W, Miyakawa A, Kawata Y. World J Microbiol Biotechnol. 6/7/2015
  • Neuron-like differentiation of mesenchymal stem cells on silicon nanowires. Kim H, Kim I, Choi HJ, Kim SY, Yang EG. Nanoscale. 8/30/2014

Recent Research & Development for Carbides

  • Ionization-induced annealing of pre-existing defects in silicon carbide. Zhang Y, Sachan R, Pakarinen OH, Chisholm MF, Liu P, Xue H, Weber WJ. Nat Commun. 10/16/2015
  • The Effect of Cobalt Loading on Fischer Tropsch Synthesis Over Silicon Carbide Supported Catalyst. Lee JS, Jung JS, Moon DJ. J Nanosci Nanotechnol. 10/1/2015
  • [Study on the Interface Characteristics of Cemented Carbide after Stripping Ti Department Coatings]. Yan Q, Liang Z, Song HJ, Wu T, Wu J. Guang Pu Xue Yu Guang Pu Fen Xi. 9/30/2015
  • Optical nonlinearities in high-confinement silicon carbide waveguides. Cardenas J, Yu M, Okawachi Y, Poitras CB, Lau RK, Dutt A, Gaeta AL, Lipson M. Opt Lett. 9/29/2015
  • Discovery of a Missing Link: Detection and Structure of the Elusive Disilicon Carbide Cluster. McCarthy MC, Baraban JH, Changala PB, Stanton JF, Martin-Drumel MA, Thorwirth S, Gottlieb CA, Reilly NJ. J Phys Chem Lett. 9/29/2015
  • Sensing Characteristics of a graphene-like Boron Carbide Monolayer towards Selected Toxic Gases. Mahabal MS, Deshpande MD, Hussain T, Ahuja R. Chemphyschem. 9/29/2015
  • Two-Dimensional Vanadium Carbide (MXene) as Positive Electrode for Sodium-Ion Capacitors. Dall'Agnese Y, Taberna PL, Gogotsi Y, Simon P. J Phys Chem Lett. 9/22/2015
  • Corrective finishing of a micro-aspheric mold made of tungsten carbide to 50??nm accuracy. Guo J. Appl Opt. 9/21/2015
  • Iron Carbide Nanoparticles Encapsulated in Mesoporous Fe-N-Doped graphene-Like Carbon Hybrids as Efficient Bifunctional Oxygen Electrocatalysts. Jiang H, Yao Y, Zhu Y, Liu Y, Su Y, Yang X, Li C. ACS Appl Mater Interfaces. 4/1/2015
  • Evaluation of the toxic potential of calcium carbide in the third instar larvae of transgenic Drosophila melanogaster (hsp70-lacZ)Bg(9). Danish M, Fatima A, Khanam S, Jyoti S, Rahul, Ali F, Naz F, Siddique YH. Chemosphere.

Free Test Sample Program

We recognize many of our customers are purchasing small quantities directly online as trial samples in anticipation of placing a larger future order or multiple orders as a raw material for production. Since our primary business is the production of industrial quantities and/or highly consistent batches which can be used for commercial production and purchased repeatedly in smaller quantity, American Elements offers trial samples at no charge on the following basis. Within 6 months of purchasing materials directly online from us, you have the option to refer back to that order and advise that it is the intention of your company, institution or lab to either purchase a larger quantity, purchase the material in regular intervals or purchase more on some other basis.

We will then evaluate your future needs and assuming the quantity or number of future purchases qualify, we will fully credit your purchase price with the next order. Because of the many variables in the quantity and number of orders you may place, it is impossible to evaluate whether your future order(s) will qualify for this program prior to your placing your next order. Please know American Elements strongly desires to make this free sample program available to you and will make every effort to do so once your next order is placed.