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Silicon Carbide Powder

High Purity SiC Powder
CAS 409-21-2


Product Product Code Request Quote
(2N) 99% Silicon Carbide Powder SI-C-02-P Request Quote
(2N5) 99.5% Silicon Carbide Powder SI-C-025-P Request Quote
(3N) 99.9% Silicon Carbide Powder SI-C-03-P Request Quote
(3N5) 99.95% Silicon Carbide Powder SI-C-035-P Request Quote
(4N) 99.99% Silicon Carbide Powder SI-C-04-P Request Quote
(5N) 99.999% Silicon Carbide Powder SI-C-05-P Request Quote

CHEMICAL
IDENTIFIER
Formula CAS No. PubChem SID PubChem CID MDL No. EC No IUPAC Name Beilstein
Re. No.
SMILES
Identifier
InChI
Identifier
InChI
Key
SiC 409-21-2 134973805 9863 MFCD00049531 206-991-8 methanidylidynesilicon N/A [C-]#[Si+] 1\/CSi\/c1-2 HBMJWWWQQXIZIP-UHFFFAOYSA-N

PROPERTIES Compound Formula Mol. Wt. Appearance Density Exact Mass Monoisotopic Mass Charge MSDS
SiC 40.1 Silvery 3.22 g/cm3 39.976927 39.976927 0 Safety Data Sheet

Carbide IonAmerican Elements specializes in producing high purity Silicon Carbide Powder with the smallest possible average grain sizes for use in preparation of pressed and bonded sputtering targets and in Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD) processes including Thermal and Electron Beam (E-Beam) Evaporation, Low Temperature Organic Evaporation, Atomic Layer Deposition (ALD), Metallic-Organic and Chemical Vapor Deposition (MOCVD). Powders are also useful in any application where high surface areas are desired such as water treatment and in fuel cell and solar applications. Nanoparticles () also produce very high surface areas. Our standard Powder particle sizes average in the range of - 325 mesh, - 100 mesh, 10-50 microns and submicron (< 1 micron). We can also provide many materials in the nanoscale range. Like diamond, a pure carbon compound, Carbide compounds tend to be extremely hard, refractory and resistant to wear, corrosion and heat, making them excellent candidates for coatings for drills and other tools. They often have other valuable properties in combination with toughness, such as electrical conductivity, low thermal expansion and abrasiveness.

Silicon (Si) atomic and molecular weight, atomic number and elemental symbolSilicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental Silicon Silica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone. For more information on silicon, including properties, safety data, research, and American Elements' catalog of silicon products, visit the Silicon element page.

HEALTH, SAFETY & TRANSPORTATION INFORMATION
Warning
H315-H319-H335
Xi
36/37/38
26-36
VW0450000
N/A
3
Exclamation Mark-Acute Toxicity        

SILICON CARBIDE SYNONYMS
methanidylidynesilicon; Carborundum; Silicon monocarbide; Betarundum Carborundeum; carbon silicide; Green densic

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PACKAGING SPECIFICATIONS FOR BULK & RESEARCH QUANTITIES
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Material Safety Data Sheet (MSDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes.


Have a Question? Ask a Chemical Engineer or Material Scientist
Request an MSDS or Certificate of Analysis

Recent Research & Development for Silicon

  • 3D hierarchical assembly of ultrathin MnO2 nanoflakes on silicon nanowires for high performance micro-supercapacitors in Li- doped ionic liquid.. Dubal DP, Aradilla D, Bidan G, Gentile P, Schubert TJ, Wimberg J, Sadki S, Gomez-Romero P.. Sci Rep. 2015 May 18
  • Stabilization of elusive silicon oxides.. Wang Y, Chen M, Xie Y, Wei P, Schaefer HF 3rd, Schleyer Pv, Robinson GH.. Nat Chem. 2015 Jun
  • Main group chemistry: Small silicon oxides isolated.. Apeloig Y.. Nat Chem. 2015 May 20
  • Phonon Engineering in Isotopically Disordered Silicon Nanowires.. Mukherjee S, Givan U, Senz S, Bergeron A, Francoeur S, de la Mata M, Arbiol J, Sekiguchi T, Itoh KM, Isheim D, Seidman DN, Moutanabbir O.. Nano Lett. 2015 May 20.
  • Lithiation of Silicon Nanoparticles Confined in Carbon Nanotubes. Yu WJ, Liu C, Hou PX, Zhang L, Shan XY, Li F, Cheng HM. ACS Nano. 2015 Apr 13. : ACS Nano
  • Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films. Rashidi N, Vai AT, Kuznetsov VL, Dilworth JR, Edwards PP. Chem Commun (Camb). 2015 Apr 16. : Chem Commun (Camb)
  • The photodynamic antibacterial effects of silicon phthalocyanine (pc) 4. Dimaano ML, Rozario C, Nerandzic MM, Donskey CJ, Lam M, Baron ED. Int J Mol Sci. 2015 Apr 8: Int J Mol Sci
  • Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition. Jia E, Zhou C, Wang W. Nanoscale Res Lett. 2015 Mar 13: Nanoscale Res Lett
  • High-Speed GaN/GaInN nanowire array LED on Silicon (111). Köster R, Sager D, Quitsch WA, Pfingsten O, Poloczek A, Blumenthal S, Keller G, Prost W, Bacher G, Tegude FJ. Nano Lett. 2015 Mar 10.
  • Carbon p Electron Ferromagnetism in Silicon Carbide. Wang Y, Liu Y, Wang G, Anwand W, Jenkins CA, Arenholz E, Munnik F, Gordan OD, Salvan G, Zahn DR, Chen X, Gemming S, Helm M, Zhou S. Sci Rep. 2015 Mar 11
  • Complete magnesiothermic reduction reaction of vertically aligned mesoporous silica channels to form pure silicon nanoparticles. Kim KH, Lee DJ, Cho KM, Kim SJ, Park JK, Jung HT. Sci Rep. 2015 Mar 11

Recent Research & Development for Carbides

  • Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide.. Lafont F, Ribeiro-Palau R, Kazazis D, Michon A, Couturaud O, Consejo C, Chassagne T, Zielinski M, Portail M, Jouault B, Schopfer F, Poirier W.. Nat Commun. 2015 Apr 20
  • Optical properties of zirconium carbide in 60-200  Å wavelength region using x-ray reflectivity technique.. Singh A, Modi MH, Lodha GS.. Appl Opt. 2015 Jan 10
  • THz saturable absorption in turbostratic multilayer graphene on silicon carbide.. Bianco F, Miseikis V, Convertino D, Xu JH, Castellano F, Beere HE, Ritchie DA, Vitiello MS, Tredicucci A, Coletti C.. Opt Express. 2015 May 4
  • Nitrogen-doped Graphene-Supported Transition-metals Carbide Electrocatalysts for Oxygen Reduction Reaction.. Chen M, Liu J, Zhou W, Lin J, Shen Z.. Sci Rep. 2015 May 22
  • Nanostructured vanadium carbide thin films produced by RF magnetron sputtering.. Pat S, Korkmaz Ş.. Scanning. 2015 Mar 30.
  • Confining Iron Carbide Nanocrystals inside CNx@CNT toward an Efficient Electrocatalyst for Oxygen Reduction Reaction.. Zhang Y, Jiang WJ, Guo L, Zhang X, Hu JS, Wei Z, Wan LJ.. ACS Appl Mater Interfaces. 2015 May 22.
  • Oxidative stress in bacteria (Pseudomonas putida) exposed to nanostructures of silicon carbide.. Borkowski A, Szala M, Kowalczyk P, Cłapa T, Narożna D, Selwet M.. Chemosphere. 2015 May 7
  • A metallic superhard boron carbide: first-principles calculations.. Ma M, Yang B, Li Z, Hu M, Wang Q, Cui L, Yu D, He J.. Phys Chem Chem Phys. 2015 Apr 1
  • Annealing-dependent electrical properties of Ga-doped ZnO film on silicon carbide.. Koo SM, Lee JH, Kang MS.. J Nanosci Nanotechnol. 2014 Dec
  • Tungsten Carbide-Cobalt Nanoparticles Induce Reactive Oxygen Species, AKT, ERK, AP-1, NF-κB, VEGF, and Angiogenesis.. Liu LZ, Ding M, Zheng JZ, Zhu Y, Fenderson BA, Li B, Yu JJ, Jiang BH.. Biol Trace Elem Res. 2015 Apr 19.