Linear Formula:

SiGe2•In•As2Se3

MDL Number:

N/A

EC No.:

N1

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Silicon Germanium Indium Arsenic Selenide Sputtering Target
SIGE-COMPD-02-ST
Pricing > SDS > Data Sheet >

Silicon Germanium Indium Arsenic Selenide Sputtering Target Properties (Theoretical)

Compound Formula Si/Ge/In/As/Se
Appearance Solid
Melting Point N/A
Boiling Point N/A
Density N/A
Solubility in H2O N/A

Silicon Germanium Indium Arsenic Selenide Sputtering Target Health & Safety Information

Signal Word Danger
Hazard Statements H330
Hazard Codes T
Precautionary Statements P260-P284-P320-P304+P340-P405-P501
Risk Codes N/A
Safety Statements N/A
Transport Information UN 3077 9/PG III
GHS Pictograms

About Silicon Germanium Indium Arsenic Selenide Sputtering Target

American Elements specializes in producing high purity Silicon Germanium Indium Arsenic Selenide Sputtering Targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard sputtering targets for thin film deposition are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Rotary (cylindrical), round, rectangular, square, ring, annular, oval, "dog-bone" and other shaped targets are available in standard, custom, and research sized dimensions . All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please request a quote above for more information on lead time and pricing.

Silicon Germanium Indium Arsenic Selenide Sputtering Target Synonyms

Ge/As/Se/In/Si

Chemical Identifiers

Linear Formula SiGe2•In•As2Se3
MDL Number N/A
EC No. N1
Pubchem CID N/A

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

American Elements accepts checks, wire transfers, ACH, most major credit and debit cards (Visa, MasterCard, AMEX, Discover) and Paypal.

For the convenience of our international customers, American Elements offers the following additional payment methods:

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Related Elements

Arsenic

See more Arsenic products. Arsenic (atomic symbol: As, atomic number: 33) is a Block P, Group 15, Period 4 element with an atomic radius of 74.92160. Arsenic Bohr ModelThe number of electrons in each of arsenic's shells is 2, 8, 18, 5 and its electron configuration is [Ar] 3d10 4s2 4p3. The arsenic atom has a radius of 119 pm and a Van der Waals radius of 185 pm. Arsenic was discovered in the early Bronze Age, circa 2500 BC. It was first isolated by Albertus Magnus in 1250 AD. In its elemental form, arsenic is a metallic grey, brittle, crystalline, semimetallic solid. Elemental ArsenicArsenic is found in numerous minerals including arsenolite (As2O3), arsenopyrite (FeAsS), loellingite (FeAs2), orpiment (As2S3), and realgar (As4S4). Arsenic has numerous applications as a semiconductor and other electronic applications as indium arsenide, silicon arsenide and tin arsenide. Arsenic is finding increasing uses as a doping agent in solid-state devices such as transistors.

Germanium

See more Germanium products. Germanium (atomic symbol: Ge, atomic number: 32) is a Block P, Group 14, Period 4 element with an atomic weight of 72.63. Germanium Bohr ModelThe number of electrons in each of germanium's shells is 2, 8, 18, 4 and its electron configuration is [Ar] 3d10 4s2 4p2. The germanium atom has a radius of 122.5 pm and a Van der Waals radius of 211 pm. Germanium was first discovered by Clemens Winkler in 1886. In its elemental form, germanium is a brittle grayish white semi-metallic element. Germanium is too reactive to be found naturally on Earth in its native state. High Purity (99.999%) Germanium (Ge) MetalIt is commercially obtained from zinc ores and certain coals. It is also found in argyrodite and germanite. It is used extensively as a semiconductor in transitors, solar cells, and optical materials. Other applications include acting an alloying agent, as a phosphor in fluorescent lamps, and as a catalyst. The name Germanium originates from the Latin word "Germania" meaning "Germany."

Indium

See more Indium products. Indium (atomic symbol: In, atomic number: 49) is a Block P, Group 13, Period 5 element with an atomic weight of 114.818. The number of electrons in each of indium's shells is [2, 8, 18, 18, 3] and its electron configuration is [Kr] 4d10 5s2 5p1. The indium atom has a radius of 162.6 pm and a Van der Waals radius of 193 pm. Indium was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863. Indium Bohr ModelIt is a relatively rare, extremely soft metal is a lustrous silvery gray and is both malleable and easily fusible. It has similar chemical properties to Elemental Indiumgallium such as a low melting point and the ability to wet glass. Fields such as optics and microelectronics that utilize semiconductor technology have wide uses for indium, especially in the form of Indiun Tin Oxide (ITO). Thin films of Copper Indium Gallium Selenide (CIGS) are used in high-performing solar cells. Indium's name is derived from the Latin word indicum, meaning violet.

Selenium

Selenium Bohr ModelSee more Selenium products. Selenium (atomic symbol: Se, atomic number: 34) is a Block P, Group 16, Period 4 element with an atomic radius of 78.96. The number of electrons in each of Selenium's shells is 2, 8, 18, 6 and its electron configuration is [Ar] 3d10 4s2 4p4. The selenium atom has a radius of 120 pm and a Van der Waals radius of 190 pm. Selenium is a non-metal with several allotropes: a black, vitreous form with an irregular crystal structure three red-colored forms with monoclinic crystal structures and a gray form with a hexagonal crystal structure, the most stable and dense form of the element. Elemental SeleniumOne of the most common uses for selenium is in glass production the red tint that it lends to glass neutralizes green or yellow tints from impurities in the glass materials. Selenium was discovered and first isolated by Jöns Jakob Berzelius and Johann Gottlieb Gahn in 1817. The origin of the name Selenium comes from the Greek word "Selênê," meaning moon.

Silicon

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

TODAY'S SCIENCE POST!

May 19, 2022
Los Angeles, CA
Each business day American Elements' scientists & engineers post their choice for the most exciting materials science news of the day

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