Silicon Germanium Sputtering Target

Linear Formula:

Si-Ge

MDL Number:

N/A

EC No.:

N/A

ORDER

PRODUCT Product Code ORDER SAFETY DATA TECHNICAL DATA
(2N) 99% Silicon Germanium Sputtering Target
SI-GE-02-ST
Pricing > SDS > Data Sheet >
(3N) 99.9% Silicon Germanium Sputtering Target
SI-GE-03-ST
Pricing > SDS > Data Sheet >
(4N) 99.99% Silicon Germanium Sputtering Target
SI-GE-04-ST
Pricing > SDS > Data Sheet >
(5N) 99.999% Silicon Germanium Sputtering Target
SI-GE-05-ST
Pricing > SDS > Data Sheet >
(6N) 99.9999% Silicon Germanium Sputtering Target
SI-GE-06-ST
Pricing > SDS > Data Sheet >

Silicon Germanium Sputtering Target Properties (Theoretical)

Compound Formula GeSi
Molecular Weight 100.715
Appearance Target
Melting Point N/A
Boiling Point N/A
Density N/A
Solubility in H2O N/A
Exact Mass 101.898 g/mol
Monoisotopic Mass 101.898 g/mol

Silicon Germanium Sputtering Target Health & Safety Information

Signal Word N/A
Hazard Statements N/A
Hazard Codes N/A
Risk Codes N/A
Safety Statements N/A
Transport Information NONH for all modes of transport

About Silicon Germanium Sputtering Target

American Elements specializes in producing high purity Silicon Germanium Sputtering Targets with the highest possible density High Purity (99.99+%) Silicon Germanium Sputtering Targetand smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard sputtering targets for thin film deposition are available monoblock or bonded with planar target dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devices as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Rotary (cylindrical), round, rectangular, square, ring, annular, oval, "dog-bone" and other shaped targets are available in standard, custom, and research sized dimensions . All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. Please request a quote above for more information on lead time and pricing.

Silicon Germanium Sputtering Target Synonyms

Si-Ge, SiGe, amorphous germanium-silicon Si1−xGex, Ge:Si (80:20), Ge:Si (50:50), Ge:Si (90:10), Ge:Si (60:40), Si-Ge(2 wt% Ge)

Chemical Identifiers

Linear Formula Si-Ge
MDL Number N/A
EC No. N/A
Pubchem CID 10313087
IUPAC Name germanium; silicon
SMILES [Si].[Ge]
InchI Identifier InChI=1S/Ge.Si
InchI Key LEVVHYCKPQWKOP-UHFFFAOYSA-N

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Payment Methods

American Elements accepts checks, wire transfers, ACH, most major credit and debit cards (Visa, MasterCard, AMEX, Discover) and Paypal.

For the convenience of our international customers, American Elements offers the following additional payment methods:

SOFORT bank tranfer payment for Austria, Belgium, Germany and SwitzerlandJCB cards for Japan and WorldwideBoleto Bancario for BraziliDeal payments for the Netherlands, Germany, Austria, Belgium, Italy, Poland, Spain, Switzerland, and the United KingdomGiroPay for GermanyDankort cards for DenmarkElo cards for BrazileNETS for SingaporeCartaSi for ItalyCarte-Bleue cards for FranceChina UnionPayHipercard cards for BrazilTROY cards for TurkeyBC cards for South KoreaRuPay for India

Related Elements

Germanium

See more Germanium products. Germanium (atomic symbol: Ge, atomic number: 32) is a Block P, Group 14, Period 4 element with an atomic weight of 72.63. Germanium Bohr ModelThe number of electrons in each of germanium's shells is 2, 8, 18, 4 and its electron configuration is [Ar] 3d10 4s2 4p2. The germanium atom has a radius of 122.5 pm and a Van der Waals radius of 211 pm. Germanium was first discovered by Clemens Winkler in 1886. In its elemental form, germanium is a brittle grayish white semi-metallic element. Germanium is too reactive to be found naturally on Earth in its native state. High Purity (99.999%) Germanium (Ge) MetalIt is commercially obtained from zinc ores and certain coals. It is also found in argyrodite and germanite. It is used extensively as a semiconductor in transitors, solar cells, and optical materials. Other applications include acting an alloying agent, as a phosphor in fluorescent lamps, and as a catalyst. The name Germanium originates from the Latin word "Germania" meaning "Germany."

Silicon

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.

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