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Silicon Oxide Rotatable Sputtering Target

CAS #: 7631-86-9
Linear Formula:
SiO2
MDL Number
MFCD00011232
EC No.:
262-373-8

ORDER

Product Product Code ORDER SAFETY DATA Technical data
(2N) 99% Silicon Oxide Rotatable Sputtering Target SI-OX-02-STR SDS > Data Sheet >
(2N5) 99.5% Silicon Oxide Rotatable Sputtering Target SI-OX-025-STR SDS > Data Sheet >
(3N) 99.9% Silicon Oxide Rotatable Sputtering Target SI-OX-03-STR SDS > Data Sheet >
(3N5) 99.95% Silicon Oxide Rotatable Sputtering Target SI-OX-035-STR SDS > Data Sheet >
(4N) 99.99% Silicon Oxide Rotatable Sputtering Target SI-OX-04-STR SDS > Data Sheet >
(5N) 99.999% Silicon Oxide Rotatable Sputtering Target SI-OX-05-STR SDS > Data Sheet >
WHOLESALE/SKU 0000-742-{{nid}}

Silicon Oxide Rotatable Sputtering Target Properties (Theoretical)

Compound Formula O2Si
Molecular Weight 60.09
Appearance White Target
Melting Point 1,600° C (2,912° F)
Boiling Point 2,230° C (4,046° F)
Density 2533 kg/m-3
Solubility in H2O N/A
Exact Mass 59.9668 g/mol
Monoisotopic Mass 59.967 Da

Silicon Oxide Rotatable Sputtering Target Health & Safety Information

Signal Word Danger
Hazard Statements H350-H373
Hazard Codes N/A
Precautionary Statements P260-P201-P281-P202-P308+P313-P314-P405-P501a
Flash Point Not applicable
Risk Codes N/A
Safety Statements N/A
RTECS Number N/A
Transport Information NONH
WGK Germany NONH
GHS Pictogram
Image
Health Hazard - GHS08

About Silicon Oxide Rotatable Sputtering Target

Oxide IonAmerican Elements specializes in producing high purity Silicon Oxide rotatable sputtering targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, photovoltaic, and coating applications by chemical vapor deposition (CVD) and physical vapor deposition (PVD) and optical applications. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. Our standard Rotatable Targets for large area thin film deposition are produced either by spray coating on a tubular substrate or casting of a solid tube. Rotary Targets (Cylindrical Targets) are available with dimensions and configurations up to 1,000 mm in length for large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Inductively Coupled Plasma (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. Besides rotary targets we can also provide targets outside in just about any size and shape, such as rectangular, annular, or oval targets. Materials are produced using crystallization , solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form , as well as other machined shapes. We also produce Silicon as disc, granules, ingot, oxide pellets, oxide pieces, oxide powder, and rod. Oxide compounds are not conductive to electricity. However, certain perovskite structured oxides are electronically conductive finding application in the cathode of solid oxide fuel cells and oxygen generation systems. Other shapes are available by request.

Synonyms

Silicon Dioxide, Quartz, silane, dioxo, Silicon (IV) Oxide, Cristobalite, Silica, Crystalline silica, Dioxosilane, Sand

Chemical Identifiers

Linear Formula SiO2
Pubchem CID N/A
MDL Number MFCD00011232
EC No. 262-373-8
IUPAC Name Dioxosilane
Beilstein/Reaxys No. N/A
SMILES O=[Si]=O
InchI Identifier InChI=1S/O2Si/c1-3-2
InchI Key VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Chemical Formula
Molecular Weight
Standard InchI
Appearance
Melting Point
Boiling Point
Density

Packaging Specifications

Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Shipping documentation includes a Certificate of Analysis and Safety Data Sheet (SDS). Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes, and 36,000 lb. tanker trucks.

Related Elements

See more Silicon products. Silicon (atomic symbol: Si, atomic number: 14) is a Block P, Group 14, Period 3 element with an atomic weight of 28.085. Silicon Bohr MoleculeThe number of electrons in each of Silicon's shells is 2, 8, 4 and its electron configuration is [Ne] 3s2 3p2. The silicon atom has a radius of 111 pm and a Van der Waals radius of 210 pm. Silicon was discovered and first isolated by Jöns Jacob Berzelius in 1823. Silicon makes up 25.7% of the earth's crust, by weight, and is the second most abundant element, exceeded only by oxygen. The metalloid is rarely found in pure crystal form and is usually produced from the iron-silicon alloy ferrosilicon. Elemental SiliconSilica (or silicon dioxide), as sand, is a principal ingredient of glass, one of the most inexpensive of materials with excellent mechanical, optical, thermal, and electrical properties. Ultra high purity silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics industry.The name Silicon originates from the Latin word silex which means flint or hard stone.